Abstract
We had successfully fabricated CuInSe2 (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe2 films. The structure, composition, chemical state and optical characterization of CuInSe2 films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe2 thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe2 was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property.
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