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Abstract
Most important problem in C 60 field effect carrier injection technique is how to form an excellent interface between insulator and solid C 60 layers. In this paper, we have investigated the solid C 60 growth on the poly-crystalline AlN (0 0 0 1) layers with the highly and/or the randomly c-axis-oriented surfaces by molecular beam epitaxial (MBE) technique. Moreover, we have compared with the conductive characteristic of the C 60/AlN FET fabricated on the highly and/or the randomly c-axis-oriented poly-crystalline AlN layers. The results strongly indicate that the c-axis orientation is an important factor to improve the performance of the C 60/poly-crystalline AlN FET.
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