Abstract
Bismuth telluride alloys are promising thermoelectric materials used for portable␣and wearable cooling devices due to their excellent thermoelectric properties near the ambient temperature. Here, a simple and cost-effective brush-printing technique, together with a subsequent annealing treatment, has been used to prepare Bi2Te3-based thick films and prototype devices. The composition, microstructure, and electrical properties of the brush-printed p-type Bi0.5Sb1.5Te3 thick films at different annealing temperatures are investigated. It is found that annealing temperature plays an important role in promoting densification and preventing the film from cracking, hence improving the electrical transport properties. The maximum power factor of the brush-printed thick films is 0.15 mW K−2 m−1 when annealed at 673 K for 4 h. A prototype thermoelectric device is manufactured by connecting the brush-printed p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thick films with Cu thick-film electrodes on an Al2O3 substrate. The cooling performance of the thermoelectric device is evaluated by measuring the temperature difference produced under applied currents.
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