Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator**Supported by the National Natural Science Foundation of China under Grant Nos 11074280 and 11403084, the Instrument Developing Project of Chinese Academy of Sciences under Grant No YZ201152, the Fundamental Research Funds for Central Universities under Grant Nos JUSRP51323B and JUDCF12032, the Joint Innovation Project of Jiangsu Province under

Abstract

A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nanolithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nm in diameter is demonstrated to operate at temperatures up to 70 K. The charging energy of the Coulomb island is about 12.5 meV.