Abstract
The a-axis oriented TbFeO 3, (TFO) thin film was epitaxially grown on (001) Nb-1 wt.%-doped SrTiO 3 (Nb–STO) single crystal substrate to construct a heterostructure. The heterostructure exhibited a good rectifying behavior over the temperature range of 25–300 K, and the rectification ratio was continuously enhanced with increasing temperature. In positive bias direction, transport mechanism of the heterostructure showed a crossover from the Schottky-emission-like to a space-charge-limited type at 120 K, the temperature at which the TFO shows a magnetic ordering, while in the negative bias direction it was solely dominated by the space-charge-limited mechanism. The result indicates that coupling between electrical and magnetic orders can influence the rectifying behavior of the heterostructure. The observation hints the possibility to tune rectifying properties of a heterostructure via influencing magnetic properties of the magnetic layer.
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