Abstract
For the first time a smart pixel that can function as a building block of an optical transceiverwith circular dimensions is fabricated using an InP/InGaAs double-heterojunction bipolartransistor (DHBT) and an AlGaInAs/InP vertical cavity surface emitting laser (VCSEL).The DHBT showed a breakdown voltage of 12 V and a cut-off frequency of 42 GHz atIc = 30 mA. Also a high performance 1550 nm VCSEL exhibited a thresholdcurrent of 3.5 mA with a maximum optical output of 4.8 mW atIc = 20 mA and forward voltage of 1.8 V. The detector, comprised of the base-to-collectorjunction of the DHBT as a p–i–n PD, produced a photocurrent of200 µA for a given input power of 0.3 mW.
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