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Abstract
We report the fabrication and the characterization of a transistor based on modulation-dope (δ-dope) InAs/InP core shell nanowire which was grown on InAs (111) substrate by VLS techniques using MBE. The mobility of the core shell nanowire was 13,600cm2/Vs at room temperature, which is approximately 7-fold increase comparing to the simple InAs nanowire. Estimated mobility at Vds=0.1V increased from 13,600cm2/Vs at RT to 15,600cm2/Vs at low temperature. A gate voltage dependent crossover from weak-localization to weak-antilocalization was observed. We extracted the spin relaxation length and coherence length using a quasi-one-dimensional model of the conductance. The effectiveness of the InP shell passivation was confirmed.
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