Abstract
In this paper, we report the fabrication and characteristics of the top-gated thin film transistors (TFTs) with nanopolysilicon as active layers. The nanopolysilicon thin films were deposited on SiO2 layers by LPCVD and the SiO2 layers were grown on the single silicon substrates. Then the nanopolysilicon thin film transistors with different thin film thicknesses and different channel width length radios were fabricated by CMOS technology, in which the thicknesses of channel layers were 90nm and 120nm, and the channel width length radios were 160μm/160μm, 320μm/160μm and 640μm/160μm, respectively. The experiment results show that drain current is in proportion to channel width length radio. In addition, when the thickness of the nanopolysilicon thin film is 90nm and the channel width length radio is 640μm/160μm, the on/off current radio reaches 106.
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