Abstract
P-type cuprous oxide (Cu2O) thin films were fabricated by an ultrasonic spray-assisted mist chemical vapor deposition (mist CVD) method. Copper(II) acetylacetonate was used as a precursor and deionized water was used as a solvent. Cu2O was grown at a temperature of 350 °C and the films were gradually changed from Cu2O to CuO by increasing the growth temperature. The Cu2O film grown at 350 °C showed p-type conductivity with a carrier concentration of 3.3 × 1015 cm−3 and a Hall mobility of 0.2 cm2·V−1·s−1.
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