Abstract
This work presents the photovoltaic properties improvement of N-I-P structure amorphous silicon solar cells with nano-patterned structure and CdS quantum dots. The surface morphology of the amorphous silicon solar cells was examined by scanning electronic microscopy (SEM) and transmission electron microscope (TEM). The electrical properties of the nano-patterned structure and CdS quantum dots were measured by the external quantum efficiency (EQE) and current-voltage (I-V). The short circuit current is increased from 20.3 ± 0.6 mA/cm2 to 37.6 ± 0.8 mA/cm2. The power conversion efficiency is increased from 6.63% to 18.45%. For further investigation, the excitation spectrums of reflectance, photoluminescence, and absorbance of solar cells were measured and analyzed. Our results indicate that the solar cells with nano-patterned structure and CdS quantum dots might be competitive as a novel solar cell.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
