Abstract
We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around 3 µm. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The Ft and Fmax of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
