Abstract
In this article, numerical and experimental characterizations of an emitter-sharpened double-gate racetrack-shaped field emitter structure are reported. The racetrack-shaped edge emission with double-gate control is used to provide good uniformity, large field emission current density, and small turn-on voltage. In order to improve the performance of this structure further, an emitter-sharpened structure is used to minimize gate current. Experimental results show that the gate current of the emitter-sharpened double-gate structure is 7 times and 15 times smaller than that of the nonemitter-sharpened double-gate structure and the single-gate structure, respectively. Simulated results also show that the gate current of the emitter-sharpened double-gate structure can almost be eliminated.
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