Abstract
In this article, numerical and experimental characterizations of an emitter-sharpened double-gate racetrack-shaped field emitter structure are reported. The racetrack-shaped edge emission with double-gate control is used to provide good uniformity, large field emission current density, and small turn-on voltage. In order to improve the performance of this structure further, an emitter-sharpened structure is used to minimize gate current. Experimental results show that the gate current of the emitter-sharpened double-gate structure is 7 times and 15 times smaller than that of the nonemitter-sharpened double-gate structure and the single-gate structure, respectively. Simulated results also show that the gate current of the emitter-sharpened double-gate structure can almost be eliminated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.