Abstract
The Ag/Pb(Zr0.53Ti0.47)O3 (PZT) /YBa2Cu3O7.δ (YBCO) with small gate area and Ag/PZT/ultrathin-SiO2/Si heterostructrual devices have been prepared. The polarization and field effect characteristics have been studied. Highly (100) oriented PZT was successfully integrated onto Si using ultrathin-SiO2 buffer layer. Obvious field effect occurred at a low gate bias of 0.5 V. In Ag/PZT/YBCO three terminal device with the small gate area of 6×10−6 cm2, very large saturation and remnant polarization and small coercive field are obtained. The maximum modulation of YBCO channel resistance ΔRDS/RDS is 3% under the gate voltage of±9 V at 64 K, at which the superconducting and normal state transition is driven by channel current.
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