Abstract
We use ion beam etching techniques to fabricate YBCO step edge junctions (SEJ) on MgO substrates. Argon ion-beam etching (IBE) of the substrate at angles other than at normal incidence is used to define the step height and angle. Thin (/spl sim/300 nm) magnetron sputtered YBCO films are deposited over the step and patterned using microlithography and cold substrate ion-beam etching techniques. The critical current, I/sub c/ of these SEJs can be controlled by varying the angle of the step etched into the substrate. Fabrication techniques are described which produce one grain boundary at the top of the step and include a smooth return path thereby avoiding a second grain boundary at the bottom of the step. At 77 K, the current-voltage (I-V) characteristics show resistively shunted junction behaviour. These junctions routinely demonstrate reasonably large I/sub C/R/sub N/ products (0.1-0.6 mV), making them suitable for applications in high temperature SQUID devices.
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