Fabrication and characterisation of ultra sharp silicon field emitters

Abstract

Ultra sharp single crystal 〈100〉 silicon emitters have been fabricated in gated configuration using a combination of high resolution electron beam lithography and plasma dry etching. High and stable emission currents have been obtained from individual and multi-tip arrays. Critical requirements of the microfabrication technique include etching of the silicon dioxide mask with near vertical walls and a high degree of control over the isotropic etching of the silicon to produce precise undercut profiles.