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Abstract
The wafer-scale, near-infrared, and nanoporous (NP)-GaN distributed Bragg reflectors (DBRs) were fabricated by using an electrochemical anodization method for the first time. The peak reflectivity of the DBR mirrors on the sapphire substrates is ~95% in the range of 550 nm–1750 nm with different stop-band widths. To explore its potential applications, a lead-free all-inorganic perovskite film with a PL emission in the near-infrared region was grown on a DBR mirror. Compared to the reference perovskite film, the photoluminescence intensity of the perovskite film on the DBR substrate presents more than 4-fold enhancement, which is in agreement with the calculated value. The performance enhancement should be contributable to light-coupling enhancement of emission light. The near-infrared NP-GaN DBRs pave the way for developing a range of perovskite devices for broadband and large-area applications.
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