Abstract
Thin film CdTe/CdS-based avalanche photodiodes (APDs) are fabricated and characterized successfully. A separated absorption and multiplication CdTe/CdS p-i-n-i-n APD is proposed, fabricated, and analyzed. Compared with the conventional p-i-n APD, the p-i-n-i-n structure reduces the probability of premature micro-plasma breakdown, raises the gain from 147 to 473 and reduces the work voltage from 29 V to 21 V. The responsivity of APDs can reach 60 AW $^{-1}$ and the avalanche gain of the photodiodes is about 473 at 22 V. Considering that no previous report on CdTe/CdS-based APDs can be found, the results reported in this letter may promise a route to high-performance CdTe/CdS thin film photodiodes.
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