Abstract

CuInS 2/ZnO solar cells of 2% efficiency with V oc = 280 mV, I sc = 13.3 mA cm −2 and FF = 0.38 were prepared by spray pyrolysis. The role of CuInS 2 deposition parameters and the resistivity of CuInS 2 and ZnO films in the formation of efficient junctions was studied. Maximum efficiency was obtained for indium-doped ZnO films with an [In]/[Zn] atomic concentration ratio of 0.03 and CuInS 2 films deposited with 12% excess copper in spray solution. Deposition of an interlayer of CuInS 2 and post-deposition annealing of junctions are essential for obtaining good quality solar cells. Multistep tunnelling and recombination is the most likely mode of carrier transport in CuInS 2/ZnO heterojunctions.

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