Abstract
We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/ n-InZnO x diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TiN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved.
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