Fab Environment Effect on Crescent Pits Defect in Cu Metallization Process

Abstract

Copper (Cu) material is being widely used in the advance ultra large-scale integration (ULSI) in the metallization process due to its low resistivity and good performance on EM in 130nm and below technology node. In Cu metallization process of 130nm, crescent pits defect on wafer edge is often scanned and found post Cu CMP process. Thus interconnect reliability and yield loss become key issue to ensure device quality and performance. In the filed, some studies focus on the Cu plating wetting ability improvement to reduce pits defect. In this paper, atmosphere VOC (Vapor Organic Compound) effect is studied to reduce crescent pits formation.