Abstract
We present what we believe to be the first actively Q -switched monolithic microchip laser with a wavelength of 1.55 microm that uses an electro-absorbing semiconductor modulator. At an absorbed pump power of 130 mW and a switching voltage of 2.2 V, the laser produces 470-nJ pulses at a repetition rate of 10 kHz. The output is a stable single longitudinal mode with a center wavelength of 1.553 microm, and the transverse beam profile is close to an ideal Gaussian, with an M(2) value of 1.15.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
