Abstract
Abstract This paper presents a detailed two‐dimensional numerical simulation study of the bipolar device in the BiCMOS circuit environment during pull‐up transient. The unique carrier build‐up and removal in the bipolar device during transient, inducing an internal voltage overshoot, determines the switching speed of the BiPMOS device. The tradeoffs in designing the extrinsic base in terms of the switching behavior are also described. It is shown that the structure with the extrinsic base P+ area farthest from the intrinsic base region has the best switching speed owing to the smallest base‐to‐emitter capacitance and the lateral base effects.
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