Abstract
The extremely slowly decaying yellow luminescence band around 2.08 eV in GaN:Be:O is studied by continuous‐wave and time‐resolved photoluminescence, as well as photoluminescence excitation spectroscopy and absorption. The lifetime obtained for this process is around 2.2 s and is thermally quenched for temperatures between 250 and 400 K. From the photoluminescence excitation measurements, two major pumping thresholds at around 2.7 and 3.1 eV can be identified. We discuss the origin of the Be‐related 2.08 eV transition as well as the origin of the overlaying photoluminescence bands at 1.88 and 2.12 eV.
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