Abstract
We propose a new method to considerably reduce the overall growth interruption for high-quality GaAs single quantum wells during molecular beam epitaxy. The insertion of ultrathin AlAs smoothing layers at the constituent GaAs/AlxGa1−xAs heterointerfaces and growth interruptions of not more than 15 s yields an improvement of the luminescence linewidth (FWHM) to 0.56 meV for a 13 nm wide GaAs well and to a value as low as 0.195 meV for a 27 nm wide GaAs well. In addition, no Stokes shift between absorption and emission and no line splitting due to monolayer fluctuations in the well width is observed.
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