Abstract
Extremely large positive magnetoresistance (XMR) was found in a nonmagnetic semimetal InBi. Using several single crystals with different residual resistivity ratios ($RRR\mathrm{s}$), we revealed that the XMR strongly depended on the $RRR$ (sample quality). Assuming that there were no changes in effective mass ${m}^{*}$ and carrier concentrations in these single crystals, this dependence was explained by a semiclassical two-carrier model. First-principle calculations including the spin-orbit interactions (SOIs) unveiled that InBi had a compensated carrier balance and SOI-induced ``hidden'' three-dimensional (3D) Dirac bands at the $M$ and $R$ points. Because the small ${m}^{*}$ and the large carrier mobilities will be realized, these hidden 3D Dirac bands should play an important role for the XMR in InBi. We suggest that this feature can be employed as a novel strategy for the creation of XMR semimetals.
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