Extremely environment-hard and low work function transfer-mold field emitter arrays

Abstract

Extremely environment-hard and low work function field-emitter arrays (FEAs) were fabricated by a transfer-mold emitter fabrication method to produce highly reliable vacuum nanoelectronic devices able to operate stably at low voltage in highly oxidizing atmospheres. Amorphous carbon (a-C) having a work function of 3.6eV and sp3 fraction of 85.6% prepared by plasma-enhanced chemical vapor deposition was used as the emitter material. The field-emission characteristics of the obtained transfer-mold FEAs strongly depended on their work function and morphology. The environment-hard characteristics of the transfer-mold a-C FEAs were compared with those of the transfer-mold titanium nitride FEAs and nickel FEAs. X-ray photoelectron spectroscopy was used to confirm the stable chemical states of the FEAs after oxygen radical treatment. The small amount of material oxidized (6.3%) at the surface of the a-C FEAs compared with 11.8% for the TiN-FEAs and 39.0% for Ni FEAs after oxygen radical treatment explained their almost constant work function in oxidizing atmospheres. The emission fluctuation rates of transfer-mold a-C FEAs without resistive layers under in situ radical treatment were as low as ±5.0%, compared with 5–100% for conventional FEAs with resistive layers not under highly oxidizing atmospheres. Therefore, the present environment-hard and low work function transfer-mold a-C FEAs are expected to be useful for reliable vacuum nanoelectronic devices.