Abstract
Mirrors for the imaging optics of extreme-ultraviolet (EUV)lithography systems require optimal reflectivity. In this paper, results on Mo/Si multilayers for EUV radiation are reported. Themultilayers were deposited using radio-frequency-magnetronsputtering; during deposition the self-bias voltages were measured, and the influence of their variation on the multilayer reflectivityand roughness was tested. The samples were characterized usingsmall-grazing-angle x-ray reflectivity and their performance wasevaluated by measuring the EUV reflectivity at near-normalincidence. The results show that high reflectivity (>67%) andlow roughness values (<2.5 Å) can be obtained, depending on thestability of the self-bias voltage during deposition.
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