Abstract
AbstractThis work reports, for the first time, on radiation resistance of state‐of‐the‐art multicomponent Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 perovskite photodiodes, tested under high‐intensity pulsed 170 keV proton irradiation with fluence up to 1013 protons cm−2. The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 1012 protons cm−2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 1013 protons cm−2 deteriorates photodiode parameters on average by only 25% with respect to that of the as‐prepared devices. The revealed high‐performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low‐cost solution‐processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.
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