Abstract

Polarization switching of picosecond laser pulses is a fundamental concept in signal processing [C. Chen and G. Liu, Annu. Rev. Mater. Sci. 16, 203 (1986); V. R. Almeida et al., Nature 431, 1081 (2004); and A. A. P. Pohl et al., Photonics Sens. 3, 1 (2013)]. Conventional switching devices rely on the electro-optical Pockels effect and work at radio frequencies. The ensuing gating time of several nanoseconds is a bottleneck for faster switches which is set by the performance of state-of-the-art high-voltage electronics. Here we show that by substituting the electric field of several kV/cm provided by modern electronics by the MV/cm field of a single-cycle THz laser pulse, the electro-optical gating process can be driven orders of magnitude faster, at THz frequencies. In this context, we introduce diamond as an exceptional electro-optical material and demonstrate a pulse gating time as fast as 100 fs using sub-cycle THz-induced Kerr nonlinearity. We show that THz-induced switching in the insulator diamond is fully governed by the THz pulse shape. The presented THz-based electro-optical approach overcomes the bandwidth and switching speed limits of conventional MHz/GHz electronics and establishes the ultrafast electro-optical gating technology for the first time in the THz frequency range. We finally show that the presented THz polarization gating technique is applicable for advanced beam diagnostics. As a first example, we demonstrate tomographic reconstruction of a THz pulse in three dimensions.

Highlights

  • Controlling and switching light pulses at ever shorter gating time are essential for the realization of generation signal processing and optical communication systems.[1,2,3] One of the key concepts for signal processing is the ultrafast polarization flip of an optical pulse by an electro-optical (EO) modulator

  • We used a special scheme of wavefront control and improved THz focusing to reach extremely intense THz electric field of 83 MV/cm with spectral peak ∼ 3.5 THz.[10]

  • The temporal THz field shape of the resulting 50 μJ THz pulse is measured by electrooptical means in a 50 μm thin GaP crystal with a balanced photodiode detection scheme.[10,12,13]

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Summary

Introduction

Controlling and switching light pulses at ever shorter gating time are essential for the realization of generation signal processing and optical communication systems.[1,2,3] One of the key concepts for signal processing is the ultrafast polarization flip of an optical pulse by an electro-optical (EO) modulator. Conventional ultrafast lasers like Ti:sapphire systems have been explored for Kerr-based polarization switching but the main hurdle has been the required high laser intensity which complicates the polarization rotation with nonlinear absorption and spectral pulse distortions.[7] The small bandgap of most solid semiconductor Kerr media (∆E≈1-1.5 eV) enables linear and multiphoton laser absorption with a high probability due to the large photon energy (hν[800] nm ≈1.55 eV).

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