Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients

Abstract

2-D semiconductors are promising Si alternatives for channels in next-generation electronic devices. Considering the 2-D SiP2 with unique dispersion at the band edge and intrinsic P–P chains with 1-D confined electrons, we provide a comprehensive investigation on the electronic and ballistic transport properties of SiP2. Based on first-principle and ballistic quantum transport simulations, the 2-D SiP2 exhibits a strong anisotropy in both geometric structures and electronic properties, playing a critical role in the anisotropy of transmission path and device performance for SiP2 field-effect transistors (FETs). Considering the ultrahigh saturation current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {sat}}$ </tex-math></inline-formula> ) of SiP2 FETs in along-chain direction, the transfer characteristic with different gate lengths (3–12 nm) is calculated to thoroughly evaluate the performance. As a result, 5–12 nm SiP2 n-FETs with underlap (UL) configuration can fulfill the International Technology Roadmap for Semiconductors (ITRS) and International Roadmap for Devices and Systems (IRDS) goals, showing an ultrahigh ON-state current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3420 ~{\mu } \text{A}/ {\mu } \text{m}$ </tex-math></inline-formula> with 10 nm gate length. In addition, the figures of merits, such as delay time and power dissipation, are comprehensively assessed, proving the fast-switching and low-energy consumption ability of SiP2 FETs. Hence, our study demonstrates the great potential of 2-D SiP2 for future competitive electronic devices.