Abstract
High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.
Highlights
The negative-differential transconductance (NDT) devices were fabricated in the form of the gated Si p+-i-n+ ultra-thin body (UTB) metal–oxide– semiconductor field-effect transistor (MOSFET) on a silicon-on-insulator (SOI) substrate (left-hand-side panel of Fig. 1(a))
The precise control of NDT peaks in our Si p+-i-n+ UTB MOSFET is quite similar to that in highly-functional single electron/hole transistors that were devised with ultra-small quantum dots[13,14,15,16,17,18]. In this otherwise quantum nature-free NDT device, we explicitly demonstrated the systematic modulation of the Λ-NDT peak through only controlling the electrostatic junction characteristics
The NDT devices were fabricated in the form of the Si p+-i-n+ UTB-channel MOSFETs
Summary
High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. Regardless of the extensive efforts made to replace Si, technical and scientific knowledge accumulated on Si still can offer an advantage for rapid innovations[42, 43] These backgrounds prompt a systematic study on highly-functional Si NDT/NDR devices that are compatible to CMOS technology and reliable for high reproducibility. The electrical transport properties and the multivalue logic functions are thoroughly examined, and the transport mechanisms are discussed in detail
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