Extraction of the effective doping density profile in irradiated strip detectors

Abstract

The depletion depth of silicon strip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. In addition, the depth profile of the doping density and the electric field has been inferred from charge collection (generated by laser light or charged particles). We show that the depth profile of the space charge can be derived from Capacitance-Voltage (C-V) measurements using continuity constraints on the potential, field and leakage current. We analyze both un-irradiated and irradiated p-type strip sensors, show that a double-junction structure can be derived with space charge distribution depending on the bias voltage.