Abstract
In a grating-coupled high-electron-mobility transistor, weak terahertz emission with wavelength around 400 μm was observed by using a Fourier-transform spectrometer. The absolute terahertz emission power was extracted from a strong background blackbody emission by using a modulation technique. The power of terahertz emission is proportional to the drain—source current, while the power of blackbody emission has a distinct relation with the electrical power. The dependence on the drain—source bias and the gate voltage suggests that the terahertz emission is induced by accelerated electrons interacting with the grating.
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