Abstract
The temperature dependence of exciton-polariton damping in InP bulk crystal was extracted by the method of integrated absorption. The extraction procedure excluding the contribution of inhomogeneous broadening into the exciton ground state absorption linewidth is graphically illustrated. The extracted temperature-dependent damping is analyzed regarding the primary dissipative mechanism in order to determine the material parameters of exciton-polariton scattering by acoustic and optical phonons.
Highlights
Indium phosphide (InP) semiconductor material is successfully adopted in the manufacturing of high-power and high-speed electronic products Gao (2015)
Even though the extensive research for the last two decades intended to eliminate a lack of definite knowledge of many material parameters of III-V semiconductor compounds Adachi (1992), the experimental verification of exciton-polariton parameters by optical methods remains relevant nowadays
At low temperatures below the critical one, the experimentally observed absorption linewidth of exciton ground state is substantially larger than the true dissipative damping
Summary
Indium phosphide (InP) semiconductor material is successfully adopted in the manufacturing of high-power and high-speed electronic products Gao (2015). Numerous optoelectronic and photonic devices based on InP and its heterostructure systems have been developed and are widely used today Kasap (2017). Particular optical properties of InP compound makes it promising Sanvitto (2016) for future exciton-polariton device applications utilizing quasiparticle combination of light and matter. Even though the extensive research for the last two decades intended to eliminate a lack of definite knowledge of many material parameters of III-V semiconductor compounds Adachi (1992), the experimental verification of exciton-polariton parameters by optical methods remains relevant nowadays. The experimental study of exciton resonances face a problem of inhomogenous broadening of exciton lines due to the physical and crystal imperfection of the fabricated samples of a semiconductor material. Inhomogenous broadening prevails over the true homogenous broadening contributed by dissipative mechanisms of excitonpolaritons and strongly hampers determination of damping parameters
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