Abstract
In this paper, we demonstrate that the surface recombination velocity of electrons S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n0</sub> at highly p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -doped silicon surfaces can be quantified using the electron-beam-induced current (EBIC) technique. First, the 3-D electron-beam sample interaction is simulated using CASINO Monte-Carlo software in order to generate the 3-D carrier generation profile. Subsequently, this carrier generation profile is used in Sentaurus Technical Computer-Aided Design device modeling, and the EBIC response is simulated as a function of S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n0</sub> . The simulation results show a near-perfect match with the EBIC measurements obtained on a passivated and depassivated p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -emitter of n-type silicon wafer solar cells. In addition, localized Sn0 extraction on an area of 30 × 30 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is presented, clearly illustrating the advantage of EBIC as an electron-beam-based characterization technique compared with optical techniques.
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