Abstract
Based on an inverse transform method originally developed by Chandley and modified by us in the present work, we show that the height-height correlation function of a rough Si surface can be obtained directly from a single intensity distribution profile of light scattering. A novel diode array detectors arrangement was used to obtain the intensity profile. The roughness parameters, including the interface width, lateral correlation length, and roughness exponent were extracted from the height-height correlation function and were compared with that obtained by an atomic force microscope.
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