Abstract
A simple quantitative method is proposed to estimate net acceptor-type trap density (NT–ND, where NT denotes a gross acceptor-type trap density, and ND denotes a donor density) in semi-insulating GaN layers, widely used as the electron channel layer in AlGaN/GaN heterojunction field-effect-transistors. The DC current–voltage characteristics of a semi-insulating GaN layer on a Si wafer have a threshold voltage (VTH). Band diagram simulation reveals that NT–ND determines VTH, and hence, the NT–ND in semi-insulating GaN films can be experimentally estimated by measuring VTH.
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