Abstract
The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10−7–10−6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.
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