Abstract
In this paper, a method of extracting the junction temperature based on the turn-on current switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs) is proposed. The temperature dependence of dIDS/dt is analyzed theoretically, and experimentally to show that dIDS/dt increases with the rising junction temperature. In addition, other factors affecting dIDS/dt are also discussed by using the fundamental device physics equations and experiments. The result shows that the increase of the DC-link voltage VDC, the external gate resistance RG-ext, and the decrease of the driving voltage VGG can increase the temperature sensitivity of the dIDS/dt. A PCB (printed circuit board) Rogowski coil measuring circuit based on the fact that the SiC MOSFET chip temperature and dIDS/dt is estimated in a linear way is designed to obtain the junction temperature. The experimental results demonstrate that the proposed junction temperature extracting is effective.
Highlights
In recent years, power semiconductor devices such as the insulated gate bipolar transistor (IGBT)and the metal-oxide semiconductor field effect transistors (MOSFETs) have been widely applied in many industrial fields especially fields with high reliability requirements in new energy, wind power generation, and automotive and aerospace industries [1]
The metal-oxide semiconductor field effect transistors (MOSFETs) have been widely applied in many industrial fields especially fields with high reliability requirements in new energy, wind power generation, and automotive and aerospace industries [1]
Studies have shown that 31% of failures in power electronic converters can be attributed to the failure of power devices while 60% of device failures are due to thermal stress
Summary
Power semiconductor devices such as the insulated gate bipolar transistor (IGBT). Reference [16] uses the turn-off delay of IGBT to measure the junction temperature, but SiC MOSFET is a unipolar switching device and does not include any extracting minority carriers during the turned off transient. Reference [17] proposed a method to obtain the junction temperature based on the peak value of the gate current IG peak during the SiC MOSFET turn-on transient. In this paper, based on the switching characteristics of SiC MOSFET, the junction temperature is obtained by the turn-on current switching rate (dIDS /dt). From the SiC MOSFET turn-on process, it can be seen that temperature-related factors include the threshold voltage VTH and the drain current change rate dIDS /dt. 66 of and Junction Temperature order demonstrate dIDS /dt temperature dependence, a 1.2
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