Extraction of electronic transport parameters in submicrometer gate-length MODFET's

Abstract

A systematic measurement scheme is developed for the extraction of the intrinsic electronic transport parameters of submicrometer-gate-length modulation-doped field-effect transistors (MODFETs). These parameters include the intrinsic gate-to-channel capacitance and the channel sheet carrier concentration, under low-drain-voltage bias, and the channel carrier transit time, in the current-saturation mode of device operation. The extraction methods are based on independent measurements of low-field and high-field electronic transport parameters. Experimental results obtained from 0.25- mu m gate-length pseudomorphic and conventional MODFETs clearly demonstrate the self-consistency of the methods. >