Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT

Abstract

This article presents unique methods for extracting essential device parameters of p-GaN/AlGaN/GaN HEMT from its gate capacitance-voltage characteristics. These parameters encompass p-GaN layer doping, AlGaN barrier layer thickness, threshold voltage, effective interface charge at AlGaN/GaN, and UID-GaN layer doping. Detailed step-by-step extraction techniques are elucidated, and their accuracy is rigorously validated against experimental and simulation data. The suggested methods are analytical and straightforward to comprehend. Furthermore, it enables the determination of trap density and its distribution at the AlGaN/GaN interface. These extraction processes play a crucial role in the comprehensive characterization of p-GaN/AlGaN/GaN HEMTs. The extracted device parameters can subsequently be used to improve device optimization, modelling, fabrication, and process control for normally-OFF p-GaN-gated HEMTs.