Abstract
We have examined the effect of temperature and pressure on the Raman-active G-band of graphene nanoplatelets with an average thickness of 4 nm. Measuring the Raman mode frequency and width of the G-band as a function of temperature and pressure allowed us to extract the individual factors contributing to the frequency and width of the G-band, that is, the volumetric (thermal expansion) and anharmonic (phonon–phonon interactions) terms responsible for the Raman shift and the electron–phonon coupling and anharmonic contributions controlling the width/lifetime of the G-band. Considering the available literature, the significant role of the anharmonic effects in understanding the G-band physical processes in carbon-based systems is highlighted.
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