External electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energy and the diamagnetic susceptibility of a hydrogenic impurity quantum dot

Abstract

Electric field, hydrostatic pressure and conduction band non-parabolicity effects on the binding energies of the lower-lying states and the diamagnetic susceptibility of an on-center hydrogenic impurity confined in a typical GaAs / Al x Ga 1 − x As spherical quantum dot is theoretically investigated, by direct diagonalization of the Hamiltonian. To this end, the effect of band non-parabolicity has been performed, by means of the Luttinger–Kohn effective mass equation. Binding energies and diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot size, external electric field strength and hydrostatic pressure, with considering the edge-band non-parabolicity. Results show that the external electric field and the hydrostatic pressure have an obvious influence on the binding energies and the diamagnetic susceptibility of the impurity.