External bias dependent dynamic terahertz propagation through BiFeO3 film

Abstract

Interactions of terahertz radiations with matter can lead to the realization of functional devices related to sensing, high-speed communications, non-destructive testing, spectroscopy, etc In spite of the versatile applications that THz can offer, progress in this field is still suffering due to the dearth of suitable responsive materials. In this context, we have experimentally investigated emerging multiferroic BiFeO3 film (∼200 nm) employing terahertz time-domain spectroscopy (THz-TDS) under vertically applied (THz propagation in the same direction) electric fields. Our experiments reveal dynamic modulation of THz amplitude (up to about 7% within 0.2–1 THz frequency range) because of the variation in electric field from 0 to 600 kV cm−1. Further, we have captured signatures of the hysteretic nature of polarization switching in BiFeO3 film through non-contact THz-TDS technique, similar trends are observed in switching spectroscopy piezoresponse force microscope measurements. We postulate the modulation of THz transmissions to the alignment/switching of ferroelectric polarization domains (under applied electric fields) leading to the reduced THz scattering losses (hence, reduced refractive index) experienced in the BiFeO3 film. This work indicates ample opportunities in integrating nanoscale multiferroic material systems with THz photonics in order to incorporate dynamic functionalities to realize futuristic THz devices.