Abstract
Whole visible range emitting CuInS2/ZnS QDs were obtained with broad band-width and high luminous efficiency by altering the Cu/In ratio and coating ZnS layer. 1-Dodecanethiol (DDT) as a sulfur source in the ZnS coating process can inhibit the lattice defects caused by Zn2+ inter-diffusion, thus increasing the photoluminescence quantum yield (PL QY). Then the stability and lighting performance of white light-emitting diodes (WLEDs) based on these CuInS2/ZnS QDs were characterized. The optimized WLED device exhibited a moderate luminous efficacy (LE) (70.33 lm·W-1) and ultrahigh color qualities (CRI Ra = 92.7, R9 = 95.9, R13 = 96.3) with warm white at a correlated color temperature (CCT) of 4052 K.
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