Abstract
In order to extensively control the plasma parameters in the afterglow region of electron-cyclotron-resonance (ECR) plasma for the epitaxial growth of cubic gallium nitride (c-GaN), magnetic and electric fields were applied in the afterglow region. The lowest electron temperature and the smallest space potential were obtained at a large negative mesh electrode bias under a mirror field condition. Under the mirror field condition, the crystallinity of c-GaN was better at the negative mesh biases than that at the positive ones. The integrated intensity ratio of c-GaN (200) to hexagonal GaN (10-11) measured by the X-ray rocking curve also showed a large value under the conditions of minimum electron temperature and minimum space potential.
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