Abstract
An examination of the validity range of the Shockley theory reveals that it is applicable to the emitter and collector regions for all current values of interest, whereas it is valid in the base region only for very small currents. In the present paper the treatment of the base region is extended so as to apply to arbitrary injection level and to include the effect of surface recombination. Two predictions are made: (a) the surface recombination velocity should increase with injection level; and (b) the alpha cut-off frequency for a transistor with plane parallel junctions should increase with emitter current by a factor of two.
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