Abstract
In this article, we provide an overview on the recent advances made in InN, including both planar and nanowire structures. With the improved epitaxial growth process, the background electron concentration can be reduced to low 1017 and 1013 cm−3 ranges in planar and nanowire structures, respectively, with the latter approaching the intrinsic limit of InN at room temperature. Extensive studies have shown that the measurement of p‐type conduction in InN epilayers has been fundamentally limited by the presence of electron accumulation on the c‐plane surfaces. In contrast, the nonpolar grown surfaces of InN are found to be completely free of electron accumulation. Moreover, through direct Mg dopant incorporation, the surfaces (nonpolar m‐plane) of InN nanowires can be transformed from intrinsic to nearly p‐type degenerate, which has led to the first direct measurement of p‐type conduction in InN.
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