Abstract
Pattern stiction of nanostructures during drying has become an issue with device miniaturization, and pattern collapse models have been discussed to solve this problem. These models take into account the surface tension of the liquid and the mechanical strength of the structure, but the drying rate, which is effective in suppressing pattern collapse, has not been discussed. We propose a new model that incorporates the drying rate and discuss its extensibility to the conventional IPA drying process.
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