Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg8 structure

Abstract

An extended x-ray absorption fine structure (EXAFS) investigation has been carried out on arsenic-doped Hg70Cd30Te samples. The incorporation of atomic arsenic has been achieved using a nonconventional radio-frequency plasma source in a molecular beam epitaxy reactor. Two samples from the same epitaxial wafer have been studied. One underwent a 400°C activation annealing under Hg pressure, leading to n to p-type conversion. In the commonly admitted scenario, this conversion is associated with the annealing-induced migration of As from a Hg site to a Te site. This study shows that this is not the case. Before annealing, As is found to be involved in noncrystalline structures: 50% inside an As2Te3 chalcogenide glass and 50% inside a new AsHg8 compact structure. After annealing, the As2Te3 chalcogenide glass disappears, 31% of As occupies Hg sites and 69% incorporates inside this new AsHg8 compact structure that occupies Te sites. The EXAFS results are in excellent agreement with 77K Hall-effect measurements. The new AsHg8 structure is found to have an acceptor behavior. Overall, this study provides an entirely new vision of extrinsic p-type doping of HgCdTe as well as the first experimental evidence of As site transfer induced by annealing.